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SLOTTED PHOTOINTERRUPTER
Description
The MIT-5A11J consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter.
11.00 (.433) 7.00 (.276) 2 1
MIT-5A11J
Package Dimensions
Unit : mm (inches)
13.00 (.512) 4
3
2.00 (.079)
6.00 (.236)
OPTICAL LINE
Features
l l l l l
0.50 (.020)
0.50 (.020)
Non -contact switching For- direct pc board Dual - in - line socket mounting Fast switching speed Choice of mounting configuration.
6.00 (.236) 2.54 (.100) 1.58 (.062) 9.50 (.370)
1.50 (.059)
4.00 (.157)
5.00 (.197)
2.85 (.112)
7.27 (.286)
1.50 (.059)
1.38 (.054)
NOTE
1. Tolerance is 0.25 mm (.010") unless otherwise noted.
Absolute Maximum Ratings
@TA =25 C Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Maximum Rating 50 5 75 30 5 75 100
o o
o
Unit mA V mW V V mW mW
-25 C to + 85 C -40oC to + 100oC
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A11J
Optical-Electrical Characteristics
@TA =25oC Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) symbol VF IR Iceo Ic (on) tr tf 1 20 20 Min. Typ. 1.2 Max. 1.4 10 100 0.4 10 100 100 Unit. V A nA V mA S S Test Conditions IF =20mA VR =5V Vce =10V Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100A, Vce =5V RL =1k, d =1mm
Collector Emitter Saturation Voltage VCE(SAT)
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
60 50 40 30 20 10 0 -25 0 25 50 75 100
Power Dissipation (mW)
120 100 80 60 40 20 0 -25 0 25 50 75 100 PTOT PD , PC
Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA)
100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8
Ambient Temperature TA (oC ) Fig.2 Power Dissipation vs Ambient Temperature Collector Current Ic (mA)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0
Vce=2V Ta=25o C
5
10
15
20
25
30
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Relative Collector Current (%) Collector Current Ic (A)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 12 Ta=25J 120 100 80 60 40 20 0 -25
Forward Current IF (mA) Fig.4 Collector Current vs Forward Current
20mA IF=15mA 10mA 4mA
0
25
50
75
o
100
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce
Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A11J
Typical Optical-Electrical Characteristic Curves
Collector Dark Current ICEO
10000 VCE=20V 1000 100 10 1 0 25 50 75 100 1000
Response Time (s)
100 10 1
V CE =2V I C =100mA Ta=25 o C
0.1 0.01
Ambient Temperature TA ( oC ) Fig.7 Collector Dark Current vs. Ambient Temperature
100
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
0.1
1
10
100
Relative Sensitivity (%)
Ta=25o C
Response Time Measurement Circuit
80 60 40 20 0 700 Input 800 900 1000 1100 1200 VR Output Input Output tr
90 % 10 %
t t tf IL VCC
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Sensing Position Characteristics (Typical)
X Y
I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C
Relative light current IL (%)
100
Ta=25 C
o
(Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + +
Distance d (mm)
Unity Opto Technology Co., Ltd.
04/01/2002

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